Investigation of Multiple Material Gate Impact on Short Channel Effects and Reliability of Nanoscale SOI MOSFETs
نویسندگان
چکیده
In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material structures. Keywords—Short-channel effects (SCEs), Dual material gate (DMG), Triple material gate (TMG), Pentamerous material gate (PMG).
منابع مشابه
آنالیز مقایسه ای روشهای بهبود اثرات کوچک سازی کانال در ترانزیستورهای SOI-MOSFET و ارائه یک تکنیک جدید
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